MGA-16316 dual lna for balanced application 1950-2700 mhz data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 90 v esd human body model = 600 v refer to avago application note a004r: electrostatic discharge, damage and control. pin use pin use 1 rfin1 9 rfout2 2 gnd 10 gnd 3 gnd 11 gnd 4 rfin2 12 rfout1 5 bias_out2 13 not used 6 vsd2 14 bias_in1 7 bias_in2 15 vsd1 8 not used 16 vias_out2 avago 16316 yyww xxxx description avago technologies MGA-16316 is an ultra low-noise high linearity ampli er pair with built-in active bias and shutdown features for balanced applications in the 2600mhz band. shutdown functionality is achieved using a single dc voltage input pin.high linearity is achieved through the use of avago technologies proprietary gaas enhancement-mode phemt process [1] . it is housed in a miniature 4.0 x 4.0 x 0.85mm 16-pinquad flat no-lead (qfn). the compact footprint coupled with ultra low noise and high linearity makes MGA-16316 an ideal choice for basestation transmitters and receivers. for applications < 1950 mhz, it is recommended to use mga-16216 1440-2350 mhz or mga-16116 450-1450 mhz. all 3 products share the same package and pin out con guration. component image 4.0 x 4.0 x 0.85 mm 3 16-lead qfn note: package marking provides orientation and identi cation 16116 = device code yyww = date code identi es year and work week of manufacturing xxxx = last 4 digit of assembly lot number pin con guration 1 4 3 2 12 9 10 11 5 8 7 6 16 13 14 15 features ? ultra low noise figure ? variable bias and shutdown functionality ? high iip3:+15dbm typ. ? gaas e-phemt technology [1] ? small package size: 4.0 x 4.0 x 0.85 mm 3 ? rohs and msl1 compliant. typical performances 2600 mhz @ 4.8v, 54ma (typ per ampli er) ? gain : 18.5 db. ? nf : 0.378 db [2] ? iip3 : 16.77 dbm ? p1db : 18.7 dbm ? shutdown voltage range vsd > 1.5v ? shutdown current (vsd1, vsd2 = 3v) : 5.1ma applications ? basestation receivers and transmitters in balanced con guration. ? ultra low-noise rf ampli ers. notes: 1. enhancement mode technology employs positive vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. measured at rfin pin of packaged part, other losses deembedded. 3. good rf practice requires all unused pins to be grounded. www.datasheet.net/ datasheet pdf - http://www..co.kr/
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-3545en - may 22, 2012 package dimensions 4.00 0.10 0.00 C0.05 0.20 ref. 2.10 4.00 0.10 pin 1 dot by marking 0.85 0.10 top view side view bottom view avago 16316 yyww xxxx 0.30 2.10 0.55 pin #1 identication chamfer 0.30 x 45 0.65 bsc part number ordering information part number no. of devices container MGA-16316 - tr1g 1000 7 inch reel MGA-16316- blkg 100 antistatic bag absolute maximum rating [1] t a =25 ? c symbol parameter units absolute maximum vdd drain voltage, rf output to ground v 5.5 idd drain current ma 100 vsd shutdown voltage v 5.5 pin cw rf input power with vsd=0v dbm 27 pin cw rf input power with vsd=3v dbm 27 pd power dissipation mw 550 tj junction temperature ? c 150 tstg storage temperature ? c -65 to 150 thermal resistance [3] (vd=4.8v, id= 52.5 ma, tc=100.26 ? c) ? jc = 51.32 c/w notes: 1. operation of this device is excess of any of these limits may cause permanent damage. 2. source lead temperature is 25 c. derate 19 mw/c for tc > 122 c. 3. thermal resistance measured using 150 c infra-red microscopy technique. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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